PDTA143ZT |
RFQ for PDTA143ZT Required Field |
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| Technical/Catalog Information | PDTA143ZT,215 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP - Pre-Biased |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 250mW |
| Resistor - Base (R1) (Ohms) | 4.7K |
| Resistor - Emitter Base (R2) (Ohms) | 47K |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250A, 5mA |
| Current - Collector Cutoff (Max) | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Package / Case | SST3 (SOT-23-3) |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 568; SOT23; ; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PDTA143ZT,215 PDTA143ZT,215 |
| Product | Manufacturers | Pack | D/C |
| PDTA143ZT | - | 08+ | - |
Typical Application |
Features |
| · Especially suitable for space reduction in interface and driver circuits· Inverter circuit configurations without use of external resistors. | ` Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 k respectively)` Simplification of circuit design` Reduces number of components and board space. |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | -50 | V |
| VCEO | collector-emitter voltage | open base | - | -50 | V |
| VEBO | emitter-base voltage | open collector | - | -10 | V |
| VI | input voltage positive negative |
- - |
+5 |
V V | |
| IO | output current (DC) | - | -100 | mA | |
| ICM | peak collector current | - | -100 | mA | |
| Ptot | total power dissipation | Tamb 25 ; note 1 | - | 250 | mW |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 | ||
| Tamb | operating ambient temperature | -65 | +150 |
